SiSH129DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

FEATURES
TrenchFET® power MOSFET
Low thermal resistance PowerPAK® package
with small size
APPLICATIONS
Load switch
Adapter switch
Notebook PC

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 35 A
Maximum Drain Source Voltage 30 V
Package Type 1212
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 20 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.8V
Minimum Gate Threshold Voltage 1.5V
Maximum Power Dissipation 52.1 W
Transistor Configuration Single
Maximum Gate Source Voltage ±20 V
Number of Elements per Chip 1
Transistor Material Si
Minimum Operating Temperature -50 °C
Width 3.15mm
Length 3.15mm
Forward Diode Voltage 1.2V
Maximum Operating Temperature +150 °C
Series TrenchFET
Height 1.07mm
Typical Gate Charge @ Vgs 47.5 nC @ 10 V
6000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 25)
$ 1.343
(exc. GST)
$ 1.544
(inc. GST)
units
Per unit
Per Pack*
25 - 75
$1.343
$33.575
100 - 475
$1.158
$28.95
500 - 975
$0.994
$24.85
1000 +
$0.78
$19.50
*price indicative
Packaging Options: