SiSH129DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® power MOSFET
Low thermal resistance PowerPAK® package
with small size
Load switch
Adapter switch
Notebook PC

Attribute Value
Channel Type P
Maximum Continuous Drain Current 35 A
Maximum Drain Source Voltage 30 V
Package Type 1212
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 20 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.8V
Minimum Gate Threshold Voltage 1.5V
Maximum Power Dissipation 52.1 W
Transistor Configuration Single
Maximum Gate Source Voltage ±20 V
Number of Elements per Chip 1
Minimum Operating Temperature -50 °C
Transistor Material Si
Width 3.15mm
Forward Diode Voltage 1.2V
Length 3.15mm
Typical Gate Charge @ Vgs 47.5 nC @ 10 V
Maximum Operating Temperature +150 °C
Series TrenchFET
Height 1.07mm
6000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip
$ 1.076
(exc. GST)
$ 1.237
(inc. GST)
Per unit
100 - 475
500 - 975
1000 +
Packaging Options: