Si7190ADP-T1-RE3 N-Channel MOSFET, 14.4 A, 250 V TrenchFET, 8-Pin SO-8 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® power MOSFET
Low thermal resistance PowerPAK® package

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 14.4 A
Maximum Drain Source Voltage 250 V
Maximum Drain Source Resistance 110 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Gate Source Voltage ±20 V
Package Type SO-8
Mounting Type Surface Mount
Pin Count 8
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 56.8 W
Typical Gate Charge @ Vgs 14.9 nC @ 10 V
Width 5mm
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Height 1.07mm
Series TrenchFET
Maximum Operating Temperature +150 °C
Length 5.99mm
Forward Diode Voltage 1.2V
Transistor Material Si
On back order for despatch 16/12/2019, delivery within 5 working days from despatch date.
Price (ex. GST) Each (In a Pack of 5)
$ 3.20
(exc. GST)
$ 3.68
(inc. GST)
units
Per unit
Per Pack*
5 - 45
$3.20
$16.00
50 - 95
$2.50
$12.50
100 - 495
$2.24
$11.20
500 - 995
$1.96
$9.80
1000 +
$1.64
$8.20
*price indicative
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