Si7190ADP-T1-RE3 N-Channel MOSFET, 14.4 A, 250 V TrenchFET, 8-Pin SO-8 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® power MOSFET
Low thermal resistance PowerPAK® package

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 14.4 A
Maximum Drain Source Voltage 250 V
Package Type SO-8
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 110 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 56.8 W
Transistor Configuration Single
Maximum Gate Source Voltage ±20 V
Number of Elements per Chip 1
Width 5mm
Minimum Operating Temperature -55 °C
Forward Diode Voltage 1.2V
Length 5.99mm
Maximum Operating Temperature +150 °C
Series TrenchFET
Height 1.07mm
Typical Gate Charge @ Vgs 14.9 nC @ 10 V
Transistor Material Si
5980 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip
$ 2.702
(exc. GST)
$ 3.107
(inc. GST)
units
Per unit
50 - 95
$2.702
100 - 495
$2.51
500 - 995
$2.282
1000 +
$2.03
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