Si7190ADP-T1-RE3 N-Channel MOSFET, 14.4 A, 250 V TrenchFET, 8-Pin SO-8 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® power MOSFET
Low thermal resistance PowerPAK® package

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 14.4 A
Maximum Drain Source Voltage 250 V
Maximum Drain Source Resistance 110 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Gate Source Voltage ±20 V
Package Type SO-8
Mounting Type Surface Mount
Transistor Configuration Single
Pin Count 8
Channel Mode Enhancement
Maximum Power Dissipation 56.8 W
Typical Gate Charge @ Vgs 14.9 nC @ 10 V
Transistor Material Si
Length 5.99mm
Number of Elements per Chip 1
Forward Diode Voltage 1.2V
Minimum Operating Temperature -55 °C
Height 1.07mm
Series TrenchFET
Maximum Operating Temperature +150 °C
Width 5mm
On back order for despatch 16/12/2019, delivery within 5 working days from despatch date.
Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip
$ 2.50
(exc. GST)
$ 2.88
(inc. GST)
units
Per unit
50 - 95
$2.50
100 - 495
$2.24
500 - 995
$1.96
1000 +
$1.64
Packaging Options: