SiSS04DN-T1-GE3 N-Channel MOSFET, 80 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 80 A
Maximum Drain Source Voltage 30 V
Maximum Drain Source Resistance 1 mΩ
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 2.2V
Maximum Gate Source Voltage -12 V, +16 V
Package Type 1212
Mounting Type Surface Mount
Transistor Configuration Single
Pin Count 8
Channel Mode Enhancement
Maximum Power Dissipation 65.7 W
Minimum Operating Temperature -55 °C
Series TrenchFET
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Typical Gate Charge @ Vgs 61.5 nC @ 10 V
Length 3.15mm
Forward Diode Voltage 1.1V
Transistor Material Si
Height 1.07mm
Width 3.15mm
6000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 10)
$ 2.38
(exc. GST)
$ 2.74
(inc. GST)
units
Per unit
Per Pack*
10 - 90
$2.38
$23.80
100 - 490
$1.80
$18.00
500 - 990
$1.55
$15.50
1000 +
$1.22
$12.20
*price indicative
Packaging Options: