SiSS04DN-T1-GE3 N-Channel MOSFET, 80 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 80 A
Maximum Drain Source Voltage 30 V
Maximum Drain Source Resistance 1 mΩ
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 2.2V
Maximum Gate Source Voltage -12 V, +16 V
Package Type 1212
Mounting Type Surface Mount
Pin Count 8
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 65.7 W
Typical Gate Charge @ Vgs 61.5 nC @ 10 V
Height 1.07mm
Series TrenchFET
Maximum Operating Temperature +150 °C
Length 3.15mm
Forward Diode Voltage 1.1V
Transistor Material Si
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Width 3.15mm
6000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip
$ 1.80
(exc. GST)
$ 2.07
(inc. GST)
units
Per unit
100 - 490
$1.80
500 - 990
$1.55
1000 +
$1.22
Packaging Options: