- RS Stock No.:
- 178-3912
- Mfr. Part No.:
- SiA110DJ-T1-GE3
- Brand:
- Vishay Siliconix
Discontinued product
- RS Stock No.:
- 178-3912
- Mfr. Part No.:
- SiA110DJ-T1-GE3
- Brand:
- Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS - Qoss
Tuned for the lowest RDS - Qoss
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 12 A |
Maximum Drain Source Voltage | 100 V |
Package Type | SC-70 |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 70 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 19 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Transistor Material | Si |
Number of Elements per Chip | 1 |
Width | 1.35mm |
Typical Gate Charge @ Vgs | 8.5 nC @ 10 V |
Length | 2.2mm |
Maximum Operating Temperature | +150 °C |
Height | 1mm |
Forward Diode Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |
Series | TrenchFET |