N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3
- RS Stock No.:
- 178-3920
- Mfr. Part No.:
- SiSS12DN-T1-GE3
- Brand:
- Vishay Siliconix
On back order for despatch 27/06/2024, delivery within 7 working days from despatch date.
Added
Price (ex. GST) Each (In a Pack of 10)
$1.659
(exc. GST)
$1.908
(inc. GST)
| Units | Per unit | Per Pack* |
| 10 - 740 | $1.659 | $16.59 |
| 750 - 1490 | $1.616 | $16.16 |
| 1500 + | $0.904 | $9.04 |
| *price indicative | ||
- RS Stock No.:
- 178-3920
- Mfr. Part No.:
- SiSS12DN-T1-GE3
- Brand:
- Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | PowerPAK 1212-8 |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.1V |
| Minimum Gate Threshold Voltage | 2.4V |
| Maximum Power Dissipation | 65.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 3.15mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 59 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 3.15mm |
| Height | 1.07mm |
| Forward Diode Voltage | 1.1V |
| Minimum Operating Temperature | -55 °C |