SiSS12DN-T1-GE3 N-Channel MOSFET, 60 A, 40 V TrenchFET, 8-Pin 1212 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

Attribute Value
Channel Type N
Maximum Continuous Drain Current 60 A
Maximum Drain Source Voltage 40 V
Maximum Drain Source Resistance 2 mΩ
Maximum Gate Threshold Voltage 1.1V
Minimum Gate Threshold Voltage 2.4V
Maximum Gate Source Voltage -16 V, +20 V
Package Type 1212
Mounting Type Surface Mount
Pin Count 8
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 65.7 W
Width 3.15mm
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Length 3.15mm
Series TrenchFET
Height 1.07mm
Typical Gate Charge @ Vgs 59 nC @ 10 V
Maximum Operating Temperature +150 °C
Forward Diode Voltage 1.1V
Transistor Material Si
5990 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip
$ 1.38
(exc. GST)
$ 1.59
(inc. GST)
Per unit
100 - 490
500 - 990
1000 +
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