SiSS12DN-T1-GE3 N-Channel MOSFET, 60 A, 40 V TrenchFET, 8-Pin 1212 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 60 A
Maximum Drain Source Voltage 40 V
Package Type 1212
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 2 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.1V
Minimum Gate Threshold Voltage 2.4V
Maximum Power Dissipation 65.7 W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +20 V
Number of Elements per Chip 1
Width 3.15mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 59 nC @ 10 V
Height 1.07mm
Series TrenchFET
Maximum Operating Temperature +150 °C
Length 3.15mm
Forward Diode Voltage 1.1V
Transistor Material Si
5940 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip
$ 1.481
(exc. GST)
$ 1.703
(inc. GST)
units
Per unit
100 - 490
$1.481
500 - 990
$1.33
1000 +
$1.131
Packaging Options: