- RS Stock No.:
- 202-5703
- Mfr. Part No.:
- NTH4L160N120SC1
- Brand:
- onsemi
- RS Stock No.:
- 202-5703
- Mfr. Part No.:
- NTH4L160N120SC1
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.
160mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 17.3 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | TO-247-4 |
Mounting Type | Through Hole |
Pin Count | 4 |
Maximum Drain Source Resistance | 0.224 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.3V |
Number of Elements per Chip | 1 |
Transistor Material | SiC |
Series | NTH |