SiC N-Channel MOSFET Transistor, 17 A, 1200 V, 4-Pin TO-247-4 onsemi NVHL160N120SC1
- RS Stock No.:
- 202-5746
- Mfr. Part No.:
- NVHL160N120SC1
- Brand:
- onsemi
450 In stock for delivery within 7 working day(s)
Added
Price (ex. GST) Each (In a Tube of 450)
$23.802
(exc. GST)
$27.372
(inc. GST)
| Units | Per unit | Per Tube* |
| 450 - 450 | $23.802 | $10,710.90 |
| 900 - 1350 | $23.207 | $10,443.15 |
| 1800 + | $21.922 | $9,864.90 |
| *price indicative | ||
- RS Stock No.:
- 202-5746
- Mfr. Part No.:
- NVHL160N120SC1
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N-Channel, 1200 V, 160 mΩ, TO247-3L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
100% UIL Tested
Low effective output capacitance
RoHS compliant
100% UIL Tested
Low effective output capacitance
RoHS compliant
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 17 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247-4 |
| Series | NVH |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.16 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.3V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |