N-Channel MOSFET, 99 A, 650 V, 3-Pin TO-247 onsemi NTHL025N065SC1
- RS Stock No.:
- 248-5818P
- Mfr. Part No.:
- NTHL025N065SC1
- Brand:
- onsemi
395 In stock for delivery within 7 working day(s)
Added
Price (ex. GST) Each (Supplied in a Tube)
$43.19
(exc. GST)
$49.67
(inc. GST)
| Units | Per unit |
| 2 - 4 | $43.19 |
| 5 - 9 | $41.02 |
| 10 - 14 | $38.99 |
| 15 + | $37.03 |
- RS Stock No.:
- 248-5818P
- Mfr. Part No.:
- NTHL025N065SC1
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L
The ON Semiconductor Silicon Carbide (SiC) MOSFET is a N channel MOSFET with 650 V drain to source voltage and 348 W power dissipation, TO247-3L packaging and this device is Halide free and RoHS compliant with exemption 7a, Pb−Free 2LI.
Ultra Low Gate Charge 164 nC
Low capacitance 278 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 19 mohm
Low capacitance 278 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 19 mohm
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 99 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |