N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB Infineon IRL520NPBF

RS Stock No.:: 541-1196
Mfr. Part No.:: IRL520NPBF
Brand:: Infineon

N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB Infineon IRL520NPBF

18 In stock for delivery within 1 working day(s)

Added

Price (ex. GST) Each

$2.00

(exc. GST)

$2.30

(inc. GST)

Units	Per unit
1 - 9	$2.00
10 - 49	$1.96
50 - 99	$1.91
100 - 249	$1.87
250 +	$1.82

RS Stock No.:: 541-1196
Mfr. Part No.:: IRL520NPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	10 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	180 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	48 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	20 nC @ 5 V
Series	LogicFET
Minimum Operating Temperature	-55 °C
Height	8.77mm