2SJ601-AZ P-Channel MOSFET, 120 A, 60 V, 4-Pin IPAK Renesas

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

P-Channel MOSFET, Renesas Electronics (NEC)

MOSFET Transistors, Renesas Electronics (NEC)

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 120 A
Maximum Drain Source Voltage 60 V
Package Type IPAK (TO-251)
Mounting Type Through Hole
Pin Count 4
Maximum Drain Source Resistance 46 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 65 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 63 nC @ 10 V
Length 6.5mm
Maximum Operating Temperature +150 °C
Width 7mm
Transistor Material Si
Height 2.3mm
510 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (Supplied in a Bag)
$ 1.93
(exc. GST)
$ 2.22
(inc. GST)
units
Per unit
25 - 95
$1.93
100 - 245
$1.832
250 - 495
$1.74
500 +
$1.654
Packaging Options: