- RS Stock No.:
- 804-7593
- Mfr. Part No.:
- IXFN210N30P3
- Brand:
- IXYS
1 In stock for delivery within 7 working day(s)
Added
Price (ex. GST) Each
$83.77
(exc. GST)
$96.34
(inc. GST)
Units | Per unit |
1 - 2 | $83.77 |
3 - 4 | $82.63 |
5 + | $81.00 |
- RS Stock No.:
- 804-7593
- Mfr. Part No.:
- IXFN210N30P3
- Brand:
- IXYS
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 192 A |
Maximum Drain Source Voltage | 300 V |
Package Type | SOT-227B |
Mounting Type | Screw Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 14.5 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 1.5 kW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Transistor Material | Si |
Number of Elements per Chip | 1 |
Width | 25.07mm |
Typical Gate Charge @ Vgs | 268 nC @ 10 V |
Length | 38.23mm |
Maximum Operating Temperature | +150 °C |
Height | 9.6mm |
Minimum Operating Temperature | -55 °C |
Series | HiperFET, Polar3 |