PNA4U73F Panasonic, 780Nm Laser Photodetector Amplifier, Through Hole Optical Control System

  • RS Stock No. 169-8099
  • Mfr. Part No. PNA4U73F
  • Manufacturer Panasonic
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Infrared Photodetector Amplifiers, Panasonic

Panasonic Integrated Photodetector Amplifiers incorporating a silicon photodiode, transimpedance amplifier and differential output amplifier. The devices are housed in small space-saving SMT packages with the detector window located on the top surface. The PNA4U62F device (851-3453) is sensitive to both visible and infrared light and includes serial communications control of gain.

IR Photodiodes, Panasonic

Specifications
Attribute Value
Spectrums Detected Laser
Wavelength of Peak Sensitivity 780nm
Mounting Type Through Hole
Dimensions 2.8 x 2.4 x 1.4mm
Application Optical Control System
Height 1.4mm
Length 2.8mm
Width 2.4mm
On back order for despatch 20/08/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each (On a Reel of 5000)
$ 0.301
(exc. GST)
$ 0.346
(inc. GST)
units
Per unit
Per Reel*
5000 +
$0.301
$1,505.00
*price indicative
Related Products
The IS314W Photo coupler is ideally suited for ...
Description:
The IS314W Photo coupler is ideally suited for driving power IGBTs and MOSFETs used in inverters of motor control and of power supply system. It contains an Al. GaAs LED optically coupled to an integrated circuit with a power output ...
The IS7000 is an optically coupled isolator consisting ...
Description:
The IS7000 is an optically coupled isolator consisting of an infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a standard 4 ...
The VOM452 and VOM453, high speed optocouplers, each ...
Description:
The VOM452 and VOM453, high speed optocouplers, each consists of a Ga. AlAs infrared emitting diode, optically coupled with an integrated photo detector and a high speed transistor. The photo detector is junction isolated from the transistor to reduce miller ...
These Large Active Area High Speed Detectors can ...
Description:
These Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even ...