Infineon NOR 128Mbit CFI, SPI Flash Memory 8-Pin WSON, S25FL128SAGNFV000
- RS Stock No.:
- 181-8392P
- Mfr. Part No.:
- S25FL128SAGNFV000
- Brand:
- Infineon
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Subtotal 84 units (supplied in a tray)*
$719.292
(exc. GST)
$827.148
(inc. GST)
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Units | Per unit |
|---|---|
| 84 - 165 | $8.563 |
| 168 + | $8.44 |
*price indicative
- RS Stock No.:
- 181-8392P
- Mfr. Part No.:
- S25FL128SAGNFV000
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 128Mbit | |
| Interface Type | CFI, SPI | |
| Package Type | WSON | |
| Pin Count | 8 | |
| Organisation | 16M x 8 bit | |
| Mounting Type | Surface Mount | |
| Cell Type | NOR | |
| Minimum Operating Supply Voltage | 1.65 (I/O) V, 2.7 (Core) V | |
| Maximum Operating Supply Voltage | 3.6 (Core) V, 3.6 (I/O) V | |
| Block Organisation | Symmetrical | |
| Length | 6mm | |
| Height | 0.75mm | |
| Width | 8mm | |
| Dimensions | 8 x 6 x 0.75mm | |
| Number of Banks | 2 | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +105 °C | |
| Automotive Standard | AEC-Q100 | |
| Maximum Random Access Time | 14.5ns | |
| Number of Words | 16M | |
| Series | S25FL | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 128Mbit | ||
Interface Type CFI, SPI | ||
Package Type WSON | ||
Pin Count 8 | ||
Organisation 16M x 8 bit | ||
Mounting Type Surface Mount | ||
Cell Type NOR | ||
Minimum Operating Supply Voltage 1.65 (I/O) V, 2.7 (Core) V | ||
Maximum Operating Supply Voltage 3.6 (Core) V, 3.6 (I/O) V | ||
Block Organisation Symmetrical | ||
Length 6mm | ||
Height 0.75mm | ||
Width 8mm | ||
Dimensions 8 x 6 x 0.75mm | ||
Number of Banks 2 | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +105 °C | ||
Automotive Standard AEC-Q100 | ||
Maximum Random Access Time 14.5ns | ||
Number of Words 16M | ||
Series S25FL | ||
This family of devices connect to a host system via a SPI. Traditional SPI single bit serial input and output (Single I/O or SIO) is
supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple width interface
is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for DDR read commands for SIO, DIO, and QIO that transfer
address and read data on both edges of the clock.
The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be
programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase
algorithms.
Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates
supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface,
asynchronous, NOR flash memories while reducing signal count dramatically.
The S25FL128S and S25FL256S products offer high densities coupled with the flexibility and fast performance required by a variety
of embedded applications. They are ideal for code shadowing, XIP, and data storage.
supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple width interface
is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for DDR read commands for SIO, DIO, and QIO that transfer
address and read data on both edges of the clock.
The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be
programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase
algorithms.
Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates
supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface,
asynchronous, NOR flash memories while reducing signal count dramatically.
The S25FL128S and S25FL256S products offer high densities coupled with the flexibility and fast performance required by a variety
of embedded applications. They are ideal for code shadowing, XIP, and data storage.
