Infineon 2 MB SPI FRAM 8-Pin DFN, FM25V20A-DG

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Subtotal 19 units (supplied in a tube)*

$609.14

(exc. GST)

$700.53

(inc. GST)

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Units
Per unit
19 - 36$32.06
37 +$31.98

*price indicative

Packaging Options:
RS Stock No.:
124-2989P
Mfr. Part No.:
FM25V20A-DG
Brand:
Infineon
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Brand

Infineon

Memory Size

2MB

Product Type

FRAM

Organisation

256k x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mount Type

Surface

Maximum Clock Frequency

40MHz

Package Type

DFN

Pin Count

8

Length

4.5mm

Height

0.75mm

Width

4 mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Automotive Standard

AEC-Q100

Minimum Operating Temperature

-40°C

Number of Words

256K

Number of Bits per Word

8

Minimum Supply Voltage

2V

Maximum Supply Voltage

3.6V

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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