Fuji Electric 1MBi900V-120-50, M153 IGBT Module, 900 A max, 1200 V, Panel Mount

  • RS Stock No. 747-1131
  • Mfr. Part No. 1MBi900V-120-50
  • Manufacturer Fuji Electric
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Modules 1-Pack, Fuji Electric

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
HH Series, Planar-NPT High-Speed Chooper IGBTs

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration Single
Transistor Configuration Single
Maximum Continuous Collector Current 900 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type M153
Pin Count 4
Maximum Power Dissipation 4.28 kW
Dimensions 108 x 62 x 36mm
Height 36mm
Length 108mm
Maximum Operating Temperature +150 °C
Width 62mm
1 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 312.08
(exc. GST)
$ 358.89
(inc. GST)
units
Per unit
1 - 9
$312.08
10 - 49
$309.01
50 - 99
$305.98
100 - 249
$302.98
250 +
$299.99
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