Infineon IKW75N65EL5XKSA1 IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 110-7176P
- Mfr. Part No.:
- IKW75N65EL5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (4 tubes of 2 units)**
$125.72
(exc. GST)
$144.58
(inc. GST)
170 In stock for delivery within 7 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80 ex GST
Units | Per unit |
---|---|
8 - 14 | $15.315 |
16 + | $14.20 |
**price indicative
- RS Stock No.:
- 110-7176P
- Mfr. Part No.:
- IKW75N65EL5XKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 75 A | |
Maximum Collector Emitter Voltage | 650 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 536 W | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Dimensions | 16.13 x 5.21 x 21.1mm | |
Maximum Operating Temperature | +175 °C | |
Energy Rating | 7.22mJ | |
Minimum Operating Temperature | -40 °C | |
Gate Capacitance | 12100pF | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 536 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 7.22mJ | ||
Minimum Operating Temperature -40 °C | ||
Gate Capacitance 12100pF | ||