Infineon FF150R12RT4HOSA1 Series IGBT Module, 150 A 1200 V AG-34MM-1, Panel Mount

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RS Stock No.:
111-6082
Mfr. Part No.:
FF150R12RT4HOSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

2

Maximum Power Dissipation

790 W

Package Type

AG-34MM-1

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Transistor Configuration

Series

Dimensions

94 x 34 x 30.2mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

9.35nF

Maximum Operating Temperature

+150 °C

Infineon IGBT Module, 150A Maximum Continuous Collector Current, 1200V Maximum Collector Emitter Voltage - FF150R12RT4HOSA1


This IGBT module is designed for high-frequency switching applications, effectively combining two transistors in series configuration. It operates efficiently within a temperature range of -40°C to +150°C. With a compact package size of 94 x 34 x 30.2 mm, this module is ideal for integration into various industrial systems.

Features & Benefits


• Maximum continuous collector current rated at 150A ensures reliable performance
• Collector-emitter voltage supports up to 1200V for robust use
• Low switching losses enhance overall energy efficiency
• Isolated base plate improves thermal management and reliability
• AG-34MM-1 package type simplifies installation in panel-mounted configurations

Applications


• Suitable for motor drives in automation systems
• Utilised in uninterruptible power supplies for enhanced reliability
• Effective in high-frequency switching across industries
• Useful in power electronic converters for seamless operations
• Works well in conjunction with industrial automation frameworks

What are the thermal characteristics of this IGBT module?


The module features a thermal resistance from junction to case of 0.19 K/W, which is essential for maintaining operational efficiency. It also supports extensive power cycling with a specified 300,000 cycles at a junction temperature of 125°C and a temperature differential of 50K.

How does this IGBT module perform under high temperatures?


It operates effectively at a maximum junction temperature of 150°C, ensuring durability in demanding applications while maintaining a low VCEsat, which is further enhanced by a positive temperature coefficient for stable performance.

What makes the gate drive characteristics advantageous?


This IGBT module features a gate charge of 1.25μC, allowing for swift switching times, facilitating high-frequency operations essential in modern industrial applications. It also supports gate-emitter voltages of ±20V for flexible drive conditioning.

Is this product suitable for power electronics in automotive applications?


Yes, its robust specifications and reliability make it a viable option for power electronics in automotive systems where high efficiency and reliability are paramount.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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