onsemi FGH40N60SFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

$151.02

(exc. GST)

$173.67

(inc. GST)

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  • 150 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
30 - 30$5.034$151.02
60 - 90$4.909$147.27
120 +$4.833$144.99

*price indicative

RS Stock No.:
124-1334
Mfr. Part No.:
FGH40N60SFDTU
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

290 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.6 x 4.7 x 20.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Discrete IGBTs, Fairchild Semiconductor


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IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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