IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264

  • RS Stock No. 125-8051
  • Mfr. Part No. IXXK110N65B4H1
  • Manufacturer IXYS
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): PH
Product Details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 570 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 880 W
Number of Transistors 1
Package Type TO-264
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 10 → 30kHz
Transistor Configuration Single
Length 20.29mm
Width 5.31mm
Height 26.59mm
Dimensions 20.29 x 5.31 x 26.59mm
Maximum Operating Temperature +175 °C
Energy Rating 3mJ
Minimum Operating Temperature -55 °C
17 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 17.23
(exc. GST)
$ 19.81
(inc. GST)
units
Per unit
1 - 1
$17.23
2 - 4
$16.77
5 - 9
$16.30
10 - 24
$15.85
25 +
$15.19
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
A range of Wolfspeed SiC (Silicon Carbide) Schottky ...
Description:
A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching ...
A range of Wolfspeed SiC (Silicon Carbide) Schottky ...
Description:
A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching ...
A range of Wolfspeed SiC (Silicon Carbide) Schottky ...
Description:
A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching ...