Infineon IKW75N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

View all IGBTs

Subtotal (1 pack of 10 units)*

$93.36

(exc. GST)

$107.36

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 +$9.336$93.36

*price indicative

RS Stock No.:
144-1203
Mfr. Part No.:
IKW75N65ES5XKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30V

Maximum Power Dissipation

395 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

30kHz

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Energy Rating

3.35mJ

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Gate Capacitance

4500pF

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links