- RS Stock No.:
- 145-3088
- Mfr. Part No.:
- NGTB40N120L3WG
- Brand:
- onsemi
Discontinued product
- RS Stock No.:
- 145-3088
- Mfr. Part No.:
- NGTB40N120L3WG
- Brand:
- onsemi
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 160 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 454 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 16.25 x 5.3 x 21.34mm |
Gate Capacitance | 4912pF |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |