Infineon IKP15N65F5XKSA1 IGBT, 30 A 650 V, 3-Pin TO-220

  • RS Stock No. 145-9180
  • Mfr. Part No. IKP15N65F5XKSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 105 W
Package Type TO-220
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.36mm
Width 4.57mm
Height 15.95mm
Dimensions 10.36 x 4.57 x 15.95mm
Energy Rating 0.17mJ
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +175 °C
Gate Capacitance 930pF
700 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Tube of 50)
$ 2.058
(exc. GST)
$ 2.367
(inc. GST)
units
Per unit
Per Tube*
50 +
$2.058
$102.90
*price indicative
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