Infineon IRGPS46160DPBF IGBT, 240 A 600 V, 3-Pin Super-247, Through Hole
- RS Stock No.:
- 145-9714
- Mfr. Part No.:
- IRGPS46160DPBF
- Brand:
- Infineon
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 145-9714
- Mfr. Part No.:
- IRGPS46160DPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 240 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 750 W | |
| Package Type | Super-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 8 → 30kHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.1 x 5.5 x 20.8mm | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 500mJ | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 240 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 750 W | ||
Package Type Super-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 8 → 30kHz | ||
Transistor Configuration Single | ||
Dimensions 16.1 x 5.5 x 20.8mm | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 500mJ | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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