STMicroelectronics STGW60V60DF IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

$222.06

(exc. GST)

$255.36

(inc. GST)

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  • 60 unit(s) ready to ship from another location
  • Plus 30 unit(s) shipping from 18 December 2025
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Units
Per unit
Per Tube*
30 - 120$7.402$222.06
150 +$6.662$199.86

*price indicative

RS Stock No.:
168-7005
Mfr. Part No.:
STGW60V60DF
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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