- RS Stock No.:
- 170-2163
- Mfr. Part No.:
- BSM200GA120DN2HOSA1
- Brand:
- Infineon
60 In stock for delivery within 7 working day(s)
Added
Price (ex. GST) Each (In a Tray of 10)
$357.397
(exc. GST)
$411.007
(inc. GST)
Units | Per unit | Per Tray* |
10 - 40 | $357.397 | $3,573.97 |
50 + | $321.656 | $3,216.56 |
*price indicative |
- RS Stock No.:
- 170-2163
- Mfr. Part No.:
- BSM200GA120DN2HOSA1
- Brand:
- Infineon
Legislation and Compliance
- COO (Country of Origin):
- SG
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 300 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 1550 W |
Package Type | 62MM Module |
Configuration | Single |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 5 |
Transistor Configuration | Single |
Dimensions | 106.4 x 61.4 x 36.5mm |
Maximum Operating Temperature | +150 °C |