Infineon IRGP4063DPBF IGBT, 96 A 600 V, 3-Pin TO-247AC, Through Hole

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RS Stock No.:
178-1417
Mfr. Part No.:
IRGP4063DPBF
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

96 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247AC

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.9 x 5.3 x 20.3mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Infineon IGBT, 96A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IRGP4063DPBF


This IGBT is an insulated gate bipolar transistor designed for high-performance power electronics applications. With compact dimensions of 15.9 x 5.3 x 20.3 mm, the component supports efficient electronic circuit design while managing high current loads. It is optimised for reliable use in various electrical systems, ensuring robust functionality under challenging conditions.

Features & Benefits


• Low VCE(on) enables efficient energy conversion
• Operates under a maximum voltage rating of 600V
• Low switching losses improve overall system efficiency
• Ultra-fast soft recovery diode enhances performance reliability
• Designed for high temperatures up to 175°C for durability

Applications


• Used for motor drive controls and inverters
• Ideal for power supply circuits in industrial equipment
• Suitable for renewable energy systems like solar inverters
• Effective in automation and robotics for efficient power management

How does this component handle high current applications?


The IGBT can sustain a continuous collector current of 96A, making it suitable for demanding applications that require significant power transfer while maintaining efficiency.

What is the significance of the 600V voltage rating?


This maximum voltage rating ensures the transistor can operate effectively in high-voltage applications, providing a safe margin for voltage spikes and fluctuations in power electronics systems.

How does its thermal resistance affect performance?


With a thermal resistance of 0.45°C/W, heat dissipation is optimised, allowing for stable operation without overheating, which enhances reliability in extended use.

Can this IGBT be used in parallel configurations?


Yes, its design allows for excellent current sharing in parallel operation, which is crucial for high current applications where multiple devices may be used together.


IGBT Transistors, International Rectifier


International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

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