onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins

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Subtotal (1 unit)*

$109.02

(exc. GST)

$125.37

(inc. GST)

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  • 22 unit(s) shipping from 22 December 2025
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1 - 1$109.02
2 - 3$107.17
4 - 7$105.49
8 - 11$103.64
12 +$101.78

*price indicative

Packaging Options:
RS Stock No.:
245-6962
Mfr. Part No.:
NXH100B120H3Q0PG
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

61 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

2

Maximum Power Dissipation

186 W

Package Type

Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins

The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with Pre applied thermal interface Material and without pre applied TIM

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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