onsemi NXH450B100H4Q2F2SG IGBT Module, 101 A 1000 V Q2BOOST - Case 180BR (Pb-Free and Halide-Free Solder Pins)
- RS Stock No.:
- 245-6987
- Mfr. Part No.:
- NXH450B100H4Q2F2SG
- Brand:
- onsemi
On back order for despatch 30/01/2025, delivery within 7 working days from despatch date.
Added
Price (ex. GST) Each (In a Tray of 36)
$386.207
(exc. GST)
$444.138
(inc. GST)
| Units | Per unit | Per Tray* |
| 36 - 36 | $386.207 | $13,903.452 |
| 72 - 72 | $385.402 | $13,874.472 |
| 108 + | $384.597 | $13,845.492 |
| *price indicative | ||
- RS Stock No.:
- 245-6987
- Mfr. Part No.:
- NXH450B100H4Q2F2SG
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
The ON Semiconductor Q2BOOST Module is a Si or SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.
Silicon or SiC Hybrid technology maximizes power density
Low switching loss reduces system power dissipation
Low inductive layout
Press fit and solder pin options
This Device is Pb free, Halogen Free and is RoHS Compliant
Low switching loss reduces system power dissipation
Low inductive layout
Press fit and solder pin options
This Device is Pb free, Halogen Free and is RoHS Compliant
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 101 A |
| Maximum Collector Emitter Voltage | 1000 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 79 W |
| Number of Transistors | 2 |
| Package Type | Q2BOOST - Case 180BR (Pb-Free and Halide-Free Solder Pins) |