Bourns BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247

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Subtotal (1 tube of 600 units)*

$2,968.80

(exc. GST)

$3,414.00

(inc. GST)

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  • 1,800 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
600 +$4.948$2,968.80

*price indicative

RS Stock No.:
253-3504
Mfr. Part No.:
BIDW20N60T
Brand:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

192 W

Number of Transistors

1

Package Type

TO-247

Configuration

Single Diode

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.

600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
Low switching loss
RoHS compliant

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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