Bourns BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247

RS Stock No.:: 253-3506
Mfr. Part No.:: BIDW30N60T
Brand:: Bourns

Bourns BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247

1200 In stock for delivery within 7 working day(s)

Added

Price (ex. GST) Each (In a Tube of 600)

$4.141

(exc. GST)

$4.762

(inc. GST)

Units	Per unit	Per Tube*
600 +	$4.141	$2,484.60
*price indicative

RS Stock No.:: 253-3506
Mfr. Part No.:: BIDW30N60T
Brand:: Bourns

Technical data sheets

Datasheet - BIDW30N60T

Legislation and Compliance

Product Details

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure gives a lower thermal resistance R(th).

600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	230 W
Number of Transistors	1
Package Type	TO-247
Configuration	Single Diode