STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 791-7655
- Mfr. Part No.:
- STGW60V60F
- Brand:
- STMicroelectronics
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Subtotal (1 pack of 5 units)*
$44.31
(exc. GST)
$50.955
(inc. GST)
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Temporarily out of stock
- Shipping from 23 April 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | $8.862 | $44.31 |
| 10 - 10 | $8.64 | $43.20 |
| 15 + | $8.52 | $42.60 |
*price indicative
- RS Stock No.:
- 791-7655
- Mfr. Part No.:
- STGW60V60F
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 375 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.75 x 5.15 x 20.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 375 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.75 x 5.15 x 20.15mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
IGBT Discretes, STMicroelectronics
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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