STMicroelectronics STGW39NC60VD IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 795-9209
- Mfr. Part No.:
- STGW39NC60VD
- Brand:
- STMicroelectronics
On back order for despatch 08/05/2024, delivery within 7 working days from despatch date.
Added
Price (ex. GST) Each (In a Pack of 2)
$10.105
(exc. GST)
$11.621
(inc. GST)
| Units | Per unit | Per Pack* |
| 2 + | $10.105 | $20.21 |
| *price indicative | ||
- RS Stock No.:
- 795-9209
- Mfr. Part No.:
- STGW39NC60VD
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 250 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |