onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount

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$24.52

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$28.20

(inc. GST)

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200 - 398$11.975$23.95
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Packaging Options:
RS Stock No.:
807-6660
Mfr. Part No.:
HGT1S10N120BNST
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

298 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.67 x 11.33 x 4.83mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Discrete IGBTs, 1000V and over, Fairchild Semiconductor


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IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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