Toshiba GT30J341,Q(O IGBT, 59 A 600 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 891-2734P
- Mfr. Part No.:
- GT30J341,Q(O
- Brand:
- Toshiba
Bulk discount available
Subtotal 20 units (supplied in a tube)*
$102.00
(exc. GST)
$117.20
(inc. GST)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 20 - 49 | $5.10 |
| 50 - 99 | $4.91 |
| 100 - 249 | $4.73 |
| 250 + | $4.57 |
*price indicative
- RS Stock No.:
- 891-2734P
- Mfr. Part No.:
- GT30J341,Q(O
- Brand:
- Toshiba
Technical data sheets
Legislation and Compliance
Product Details
- COO (Country of Origin):
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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