STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 4-Pin SCT027W65G3-4AG

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Subtotal (1 tube of 30 units)*

$930.27

(exc. GST)

$1,069.80

(inc. GST)

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  • 30 unit(s) ready to ship from another location
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Per unit
Per Tube*
30 +$31.009$930.27

*price indicative

RS Stock No.:
215-228
Mfr. Part No.:
SCT027W65G3-4AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Series

SCT

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

313W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-10 to 22 V

Forward Voltage Vf

3V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

200°C

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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