Infineon IQD0 Type N-Channel MOSFET, 151 A, 150 V Enhancement, 9-Pin PG-WHTFN-9 IQD063N15NM5CGSCATMA1

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$25.03

(exc. GST)

$28.784

(inc. GST)

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Per Pack*
2 - 18$12.515$25.03
20 - 198$11.265$22.53
200 - 998$10.385$20.77
1000 - 1998$9.635$19.27
2000 +$8.635$17.27

*price indicative

RS Stock No.:
351-911
Mfr. Part No.:
IQD063N15NM5CGSCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

151A

Maximum Drain Source Voltage Vds

150V

Package Type

PG-WHTFN-9

Series

IQD0

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

6.32mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

333W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48nC

Forward Voltage Vf

0.83V

Maximum Operating Temperature

175°C

Height

0.75mm

Width

6 mm

Length

5mm

Standards/Approvals

IEC61249-2-21, RoHS, JEDEC

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with a low RDS(on) of 6,32 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.

Cutting edge 150 V silicon technology

Outstanding FOMs

Improved thermal performance

Ultra-low parasitic

Maximized chip or package ratio

Center-Gate footprint

Industry-standard package

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