STMicroelectronics STP N channel-Channel Power MOSFET, 100 A, 80 V Enhancement, 3-Pin TO-220 STP100N8F6
- RS Stock No.:
- 719-658
- Mfr. Part No.:
- STP100N8F6
- Brand:
- STMicroelectronics
N
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Units | Per unit |
|---|---|
| 1 - 24 | $1.61 |
| 25 - 99 | $1.44 |
| 100 - 499 | $1.28 |
| 500 - 999 | $1.02 |
| 1000 + | $1.00 |
*price indicative
- RS Stock No.:
- 719-658
- Mfr. Part No.:
- STP100N8F6
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.009Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 176W | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.4 mm | |
| Length | 15.75mm | |
| Height | 4.6mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.009Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 176W | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Maximum Operating Temperature 175°C | ||
Width 10.4 mm | ||
Length 15.75mm | ||
Height 4.6mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
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