Vishay SiD N channel-Channel MOSFET, 421 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SiDR500EP

N
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RS Stock No.:
735-149
Mfr. Part No.:
SiDR500EP
Brand:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

421A

Maximum Drain Source Voltage Vds

30V

Series

SiD

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00047Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Typical Gate Charge Qg @ Vgs

120nC

Forward Voltage Vf

30V

Maximum Gate Source Voltage Vgs

16V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

6mm

Length

7mm

Height

2mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

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