Vishay TrenchFET N channel-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3

N

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RS Stock No.:
735-242
Mfr. Part No.:
SISS586DN-T1-UE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

70.6A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

PowerPAK 1212-8S

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0085Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.5nC

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N channel MOSFET is designed for efficient power switching in a wide range of electronic applications. it delivers reliable performance with thorough gate resistance and unclamped inductive switching testing, ensuring robust operation under demanding conditions. the device supports environmentally responsible designs with RoHS compliant and halogen free construction, making it suitable for modern power management systems.

Supports high reliability operation in demanding environments

Suitable for synchronous rectification applications

Ideal for use as a primary side switch in power converters

Meets RoHS compliant and halogen free requirements

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