Infineon Half Bridge C Series N channel-Channel MOSFET Modules, 185 A, 1200 V Enhancement, 7-Pin AG-62MMHB

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$1,038.72

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$1,194.53

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RS Stock No.:
762-898
Mfr. Part No.:
FF3MR12KM1HSHPSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET Modules

Channel Type

N channel

Maximum Continuous Drain Current Id

185A

Maximum Drain Source Voltage Vds

1200V

Package Type

AG-62MMHB

Series

C Series

Mount Type

Screw

Pin Count

7

Maximum Drain Source Resistance Rds

4.62mΩ

Channel Mode

Enhancement

Forward Voltage Vf

6.25V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

20mW

Typical Gate Charge Qg @ Vgs

2.65μC

Maximum Operating Temperature

175°C

Transistor Configuration

Half Bridge

Length

106.4mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
HU
The Infineon CoolSiC Trench MOSFET half bridge module features voltage rating of 2000 V and supports high current density. It is suitable for UPS systems, DC/DC converter, High-frequency switching application, Solar applications, Energy storage systems (ESS), and DC charger for EV.

Low switching losses

High current density

Qualified for industrial applications

4 kV AC 1 min insulation

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