Infineon OptiMOS™ 3 N-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK IPD220N06L3GBTMA1
- RS Stock No.:
- 110-7435
- Mfr. Part No.:
- IPD220N06L3GBTMA1
- Brand:
- Infineon
This image is representative of the product range
Stock information currently inaccessible
- RS Stock No.:
- 110-7435
- Mfr. Part No.:
- IPD220N06L3GBTMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 39.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 36 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 7 nC @ 4.5 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.2V | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 39.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 36 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 7 nC @ 4.5 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.2V | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin DPAK IPD088N06N3GBTMA1
- Vishay N-Channel MOSFET 60 V, 3-Pin DPAK IRLR014PBF
- onsemi QFET N-Channel MOSFET 60 V, 3-Pin DPAK FQD20N06TM
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin DPAK IRFS3306PBF
- onsemi QFET N-Channel MOSFET 60 V, 3-Pin TO-220AB FQP30N06
- Infineon OptiMOS N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S223ATMA1
- Infineon OptiMOS N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S2L23ATMA1
- Vishay 1 Type N-Channel Power MOSFET 60 V, 3-Pin TO-220AB IRLZ34PBF