N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-220AB Infineon IRF3205ZPBF
- RS Stock No.:
- 124-9000
- Mfr. Part No.:
- IRF3205ZPBF
- Brand:
- Infineon
100 In stock for delivery within 7 working day(s)
Added
Price (ex. GST) Each (In a Tube of 50)
$2.289
(exc. GST)
$2.632
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 50 | $2.289 | $114.45 |
| 100 - 150 | $2.255 | $112.75 |
| 200 + | $1.936 | $96.80 |
| *price indicative | ||
- RS Stock No.:
- 124-9000
- Mfr. Part No.:
- IRF3205ZPBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 110 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | TO-220AB |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 170 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 76 nC @ 10 V |
| Transistor Material | Si |
| Length | 10.54mm |
| Maximum Operating Temperature | +175 °C |
| Width | 4.69mm |
| Number of Elements per Chip | 1 |
| Height | 8.77mm |
| Minimum Operating Temperature | -55 °C |