N-Channel MOSFET, 305 A, 60 V, 3-Pin TO-220 Infineon IRL60B216

RS Stock No.:: 145-9317
Mfr. Part No.:: IRL60B216
Brand:: Infineon

N-Channel MOSFET, 305 A, 60 V, 3-Pin TO-220 Infineon IRL60B216

This image is representative of the product range

View all MOSFETs

Discontinued product

RS Stock No.:: 145-9317
Mfr. Part No.:: IRL60B216
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

StrongIRFET™ Logic-Level Power MOSFET, Infineon

An extension to the Infineon StrongIRFET family optimised for +5V logic-level gate drive. They share the same characteristics as the existing StrongIRFET family, such as low R_DS(on) for greater efficiency, and high current carrying capacity for improved ruggedness and operational reliability.

Optimal R_DS(on) @ V_GS = +4.5V
Suitable for battery-powered systems
Applications: Motor drivers, synchronous rectifier systems, OR-ing & Redundant power switches, DC-DC converters

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	305 A
Maximum Drain Source Voltage	60 V
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.4V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	172 nC @ 10 V
Length	10.67mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	4.83mm
Height	16.51mm
Minimum Operating Temperature	-55 °C
Series	StrongIRFET
Forward Diode Voltage	1.2V