PMDXB550UNEZ Hex N-Channel MOSFET, 590 mA, 30 V, 8-Pin DFN1010B-6, SOT1216 Nexperia

  • RS Stock No. 153-1920
  • Mfr. Part No. PMDXB550UNEZ
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-channel MOSFETs 25 V - 30 V, Robust performance thanks to advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.

30 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low threshold voltage
Leadless ultra small and ultra thin SMD plastic package: 1.1 ´ 1.0 ´ 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Exposed drain pad for excellent thermal conduction
Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 590 mA
Maximum Drain Source Voltage 30 V
Package Type DFN1010B-6, SOT1216
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 1.5 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 0.95V
Minimum Gate Threshold Voltage 0.45V
Maximum Power Dissipation 4030 mW
Maximum Gate Source Voltage 8 V
Number of Elements per Chip 6
Typical Gate Charge @ Vgs 0.6 nC
Height 0.36mm
Maximum Operating Temperature +150 °C
Length 1.15mm
Width 1.05mm
Minimum Operating Temperature -55 °C
14925 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 25)
$ 0.53
(exc. GST)
$ 0.61
(inc. GST)
units
Per unit
Per Pack*
25 - 100
$0.53
$13.25
125 - 1225
$0.437
$10.925
1250 - 2475
$0.343
$8.575
2500 - 3725
$0.298
$7.45
3750 +
$0.272
$6.80
*price indicative
Packaging Options:
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