N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-247 STMicroelectronics STW48N60DM2
- RS Stock No.:
- 168-5901
- Mfr. Part No.:
- STW48N60DM2
- Brand:
- STMicroelectronics
On back order for despatch 08/05/2024, delivery within 7 working days from despatch date.
Added
Price (ex. GST) Each (In a Tube of 30)
$17.082
(exc. GST)
$19.644
(inc. GST)
| Units | Per unit | Per Tube* |
| 30 - 30 | $17.082 | $512.46 |
| 60 - 90 | $16.654 | $499.62 |
| 120 + | $15.653 | $469.59 |
| *price indicative | ||
- RS Stock No.:
- 168-5901
- Mfr. Part No.:
- STW48N60DM2
- Brand:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
AEC-Q101 qualified
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, STMicroelectronics
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 40 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-247 |
| Series | MDmesh DM2 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 79 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 5.15mm |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Length | 15.75mm |
| Forward Diode Voltage | 1.6V |
| Height | 20.15mm |
| Minimum Operating Temperature | -55 °C |