N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STMicroelectronics STW56N60M2
- RS Stock No.:
- 168-8842
- Mfr. Part No.:
- STW56N60M2
- Brand:
- STMicroelectronics
On back order for despatch 08/05/2024, delivery within 7 working days from despatch date.
Added
Price (ex. GST) Each (In a Tube of 30)
$12.794
(exc. GST)
$14.713
(inc. GST)
| Units | Per unit | Per Tube* |
| 30 - 30 | $12.794 | $383.82 |
| 60 - 90 | $12.475 | $374.25 |
| 120 + | $11.73 | $351.90 |
| *price indicative | ||
- RS Stock No.:
- 168-8842
- Mfr. Part No.:
- STW56N60M2
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, STMicroelectronics
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 52 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Series | MDmesh M2 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 55 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 350 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Typical Gate Charge @ Vgs | 91 nC @ 10 V |
| Length | 15.75mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 5.15mm |
| Height | 20.15mm |
| Forward Diode Voltage | 1.6V |